5 . a formula is deduced to calculate the built - in voltage of the compound semiconductor 通過推導(dǎo),得出一個(gè)計(jì)算化合物半導(dǎo)體異質(zhì)結(jié)內(nèi)建電勢(shì)的公式。
Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure 氧化鋅( zno )是一種具有六方結(jié)構(gòu)的?族寬帶隙半導(dǎo)體材料,室溫下帶隙寬度高達(dá)3 . 3ev 。
Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure 氧化鋅( zno )是一種具有六方結(jié)構(gòu)的的寬禁帶-族半導(dǎo)體材料,室溫下能帶帶隙eg為3 . 37ev 。